The need for low power and high-speed ADC pushes for dynamic comparators to reduce power consumption and maximize speed. This paper presents an analysis of delay, speed, and comparator considerations, and analytical expressions are derived. Using the equation expression More
The need for low power and high-speed ADC pushes for dynamic comparators to reduce power consumption and maximize speed. This paper presents an analysis of delay, speed, and comparator considerations, and analytical expressions are derived. Using the equation expressions, we can understand the design of comparators and make trade-offs. Based on the presented analysis, a new dynamic comparator is proposed by modifying the circuit of the conventional tail comparator for high speed and low power at small supply voltages without complicating the circuit design, resulting in a remarkable reduction in delay time and incremental speed. Simulation results in a 180 nm CMOS technology confirm the analysis results. It is shown that the proposed conventional tail comparator reduces power consumption and increases speed. The simulation results show that the proposed comparator operates up to 2.5GHz with a delay of 69ps and consumes only 329 μW at a supply voltage of 1.2 V and an offset standard deviation of 7.8 mW.
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Designers of modern digital and analog systems have been using multiple voltage levels in one circuit to increase performance. To convert voltage levels in high-performance circuits, it is necessary to use voltage level shifter (LS) circuits with high speed and low powe More
Designers of modern digital and analog systems have been using multiple voltage levels in one circuit to increase performance. To convert voltage levels in high-performance circuits, it is necessary to use voltage level shifter (LS) circuits with high speed and low power consumption. In this article, a high-performance LS circuit called LSBB (Level Shifter based on Body Biasing) is presented. LSBB consists of three parts: body biasing, current mirror circuit, and pull-up and pull-down circuit. The main idea of this design is to use the biasing circuit to depend on the base of the body of the transistors of the input stages to the VDDL voltage. This dependence leads to changes in the threshold voltage and as a result changes in the delay and power consumption to increase the performance of the circuit. Implementation in 180 nm TSMC technology and simulation with VDDL equal to 0.4 V, VDDH equal to 1.8 V and input frequency 1 MHz indicates the correct operation and high-performance of the proposed circuit, the delay values are 21.9 nS, the power consumption is 129 nW and the PDP equal to 2825 nW*nS confirms the high-performance of LSBB.
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